?
Semiconductor Components Industries, LLC, 2011
November, 2011 ?
Rev. 6
1
Publication Order Number:
MMBD2835LT1/D
MMBD2835LT1G,
MMBD2836LT1G,
SMMBD2835LT1G
Monolithic Dual Switching
Diodes
Features
?
AEC?Q101 Qualified and PPAP Capable
?
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
MMBD2835LT1G, SMMBD2835LT1G
MMBD2836LT1G
VR
35
75
Vdc
Forward Current
IF
100
mAdc
THERMAL CHARACTERISTICS
Total Device Dissipation FR?5 Board
(Note 1)
TA
= 25
?C
Derate above 25?C
PD
225
1.8
mW
mW/?C
Thermal Resistance, Junction?to?Ambient
RJA
556
?C/W
Total Device Dissipation Alumina
Substrate, (Note 2)
TA
= 25
?C
Derate above 25?C
PD
300
2.4
mW
mW/?C
Thermal Resistance, Junction?to?Ambient
RJA
417
?C/W
Junction and Storage Temperature
TJ, Tstg
?55 to
+150
?C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR?5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
xxx = Specific Device Code
M = Date Code
= Pb?Free Package
(Note: Microdot may be in either location)
http://onsemi.com
MARKING DIAGRAM
A3X = MMBD2835LT1G
SMMBD2835LT1G
A2X = MMBD2836LT1G
xxx M
SOT?23 (TO?236AB)
CASE 318?08
STYLE 12
ANODE
3
CATHODE
1
2
CATHODE
1
Device Package Shipping?
ORDERING INFORMATION
MMBD2835LT1G SOT?23
(Pb?Free)
3,000 /
Tape & Reel
SMMBD2835LT1G SOT?23
(Pb?Free)
3,000 /
Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MMBD2836LT1G SOT?23
(Pb?Free)
3,000 /
Tape & Reel
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MMBD2838LT1G
DIODE SWITCH DUAL 50V SOT23
MMBD2838
DIODE UFAST HI COND 75V SOT-23
MMBD3004BRM-7
DIODE SW ARRAY 300V 350MW SOT-26
MMBD3004S-7
DIODE SWITCH 300V 350MW SOT23-3
MMBD301LT3
DIODE SCHOTTKY 200MW 30V SOT-23
MMBD301M3T5G
DIODE SCHOTTKY HOT 30V SOT723
MMBD352WT1G
DIODE SCHOTTKY DUAL 7V SOT-323
MMBD355LT1
DIODE SCHOTTKY DUAL CA 7V SOT-23
相关代理商/技术参数
MMBD2835LT1G_09
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Monolithic Dual Switching Diodes
MMBD2836
制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:Surface mount switching diode
MMBD2836G
制造商:ZOWIE 制造商全称:Zowie Technology Corporation 功能描述:Monolithic Dual Switching Diode
MMBD2836LT1
功能描述:二极管 - 通用，功率，开关 75V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MMBD2836LT1G
功能描述:二极管 - 通用，功率，开关 75V 200mA RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MMBD2836LT1G
制造商:ON Semiconductor 功能描述:Small Signal Diode 制造商:ON Semiconductor 功能描述:SWITCHING DIODE, 75V, 100mA, SOT-23
MMBD2837
制造商:ZOWIE 制造商全称:Zowie Technology Corporation 功能描述:MONOLITHIC DUAL SWITCHING DIODE
MMBD2837G
制造商:ZOWIE 制造商全称:Zowie Technology Corporation 功能描述:Monolithic Dual Switching Diodes